个人基本信息

冯秋菊 教授
导师级别:硕导
学科:凝聚态物理
职务:
社会兼职:

联系方式

通信地址:
电子邮件:fengqiuju@163.com
办公电话:
办公地点:

个人简介

冯秋菊,博士,教授,硕士生导师,大连理工大学博士后,大连市高层次人才(青年才俊)。主要从事宽禁带半导体材料与光电器件的相关研究工作。作为负责人主持国家自然科学基金、中国博士后科学基金、辽宁省自然科学基金、大连市科技创新基金、教育部产学合作协同育人项目及企业委托课题等项目10余项。发表SCI论文50余篇,以第一发明人获授权发明专利12项。荣获辽宁省自然科学学术论文三等奖2项,大连市自然科学优秀学术论文二等奖和三等奖各1项。获“辽宁师范大学优秀研究生指导教师”、“辽宁师范大学教学先进个人”等称号。
 

个人学习经历

2001/09-2006/03年,中国科学院长春光学精密机械与物理研究所,硕博连读

个人工作经历

 2006-至今,辽宁师范大学物理与电子技术学院,教师

研究工作概况

代表性论文:
1. Qiu-Ju Feng, Hong-Wei Liang, Yi-Ying Mei, Jia-Yuan Liu, C. C. Ling, Peng-Cheng Tao, De-Zhu Pan and Yu-Qi Yang, ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition, J. Mater. Chem. C, 2015, 3, 4678—4682.
2. Qiuju Feng, JiayuanLiu, JiayinLu, YiyingMei, ZheSong, PengchengTao, Dezhu Pan, YuqiYang, MengkeLi, Fabrication and characterization of single ZnO microwire Schottky light emitting diodes, Materials Science in Semiconductor Processing 40(2015)436–438.
3. Q.J. Feng, S. Liu, Y. Liu, H.F. Zhao, J.Y. Lu, K. Tang, R. Li, K. Xu, H.Y. Guo, Influence of Sb doping on the structural, optical and electrical properties of p-ZnO thin films prepared on n-GaN/Al2O3 substrates by a simple CVD method, Materials Science in Semiconductor Processing, 2015, 29: 188-192.
4. HW Liang, QJ Feng *, XC Xia, R Li, HY Guo, K Xu, PC Tao, YP Chen, GT Du, Room temperature electroluminescence from arsenic doped p-type ZnO nanowires/n-ZnO thin film homojunction light-emitting diode, Journal of Materials Science: Materials in Electronics, 2014, 25(4): 1955-1958.
5. Qiu Ju Feng, Jue Wang, Shuang Liu, Rui Zhuo Xu, Kai Tang, Yang Liu, Jia Yin Lu, Meng Ke Li, Fabrication and characterization of highly ordered phosphorus-doped ZnO nanocombs, Journal of Physics and Chemistry of Solids,2013,74(3): 476-479.
6. Pengcheng Tao,Qiuju Feng*, Junyan Jiang, Haifeng Zhao, Ruizhuo Xu, Shuang Liu, Mengke Li, Jingchang Sun, Zhe Song, Electroluminescence from ZnO nanowires homojunction LED grown on Si substrate by simple chemical vapor deposition, Chemical Physics Letters, 2012, 522: 92-95.
7. Feng Qiu-Ju,Jiang Jun-Yan,Tao Peng-Cheng,Liu Shuang,Xu Rui-Zhuo,Li Meng-Ke,Sun Jing-Chang,The Fabrication and Characterization of Well Aligned Petal-Like Arsenic-Doped Zinc Oxide Microrods, Chinese Physics Letters, 2011, 28(10): 108103-1-108103-3.
8. Q.J. Feng, L.Z. Hu, H.W. Liang, Y. Feng, J. Wang, J.C. Sun, J.Z. Zhao, M.K. Li, L. Dong, Catalyst-free growth of well-aligned arsenic-doped ZnO nanowires by chemical vapor deposition method, Applied Surface Science, 2010, 257(3): 1084-1087.
发明专利:
1. 冯秋菊杨毓琪,李芳,李彤彤,β-Ga2O3微米带的制备方法,专利号:ZL201710266898.0
2. 冯秋菊,刘佳媛,杨毓琪,梅艺赢,潘德柱,李梦轲,采用化学气相沉积法制备Zn掺杂p型β-Ga2O3纳米线的方法,专利号:ZL201510453146.6
3. 冯秋菊刘佳媛,徐坤,杨毓琪,潘德柱,李梦轲,自催化生长大尺寸β-Ga2O3微米线的方法,专利号:ZL201510735744.2
4. 冯秋菊,刘洋,吕佳音,唐凯,李梦轲,采用简单化学气相沉积法制备Sb掺杂p型ZnO薄膜的方法,专利号ZL201310729355.X
5. 冯秋菊,唐凯,徐坤,梅艺赢,李梦轲,通过外加纵向电场控制ZnO生长形貌的方法及其装置,专利号:ZL201410339790.6 
6. 冯秋菊,唐凯, 吕佳音,刘洋,李梦轲,单根ZnO微米线同质结发光二极管的制备方法,专利号:ZL201310730886.0
7. 冯秋菊,李梦轲,宋哲,张楠,一种p型ZnO纳米线的制备方法,专利号:ZL200810011047.2
8. 冯秋菊,石博,李昀铮,王德煜,高冲,李梦轲,采用化学气相沉积法生长β-Ga2O3微米线的方法,申请号:CN201811542186.8
9. 冯秋菊李芳李彤彤,李昀铮,石博,李梦轲,采用化学气相沉积法制备β-Ga2O3纳米球的方法,申请号:CN201810038960.5